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HGTD1N120BNS9A
- Part No
- HGTD1N120BNS9A
- Manufacturer
- onsemi
- Description
- HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA
- Datasheet
- HGTD1N120BNS9A
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.9 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 5.3 A |
| Current Rating | 5.3 A |
| Element Configuration | Single |
| Fall Time | 370 ns |
| Max Breakdown Voltage | 1.2 kV |
| Max Collector Current | 5.3 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 60 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 60 W |
| Rise Time | 14 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 67 ns |
| Turn-On Delay Time | 15 ns |
| Voltage Rating (DC) | 1.2 kV |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
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