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HGT1S10N120BNST
- Part No
- HGT1S10N120BNST
- Manufacturer
- onsemi
- Description
- HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at
- Datasheet
- HGT1S10N120BNST
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 4.2 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 35 A |
| Current Rating | 35 A |
| Element Configuration | Single |
| Fall Time | 200 ns |
| Max Breakdown Voltage | 1.2 kV |
| Max Collector Current | 35 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 298 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Digi-Reel® |
| Power Dissipation | 298 W |
| Rise Time | 15 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 165 ns |
| Turn-On Delay Time | 23 ns |
| Voltage Rating (DC) | 1.2 kV |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 1.31247 g |
| Height | 5.08 mm |
| Length | 10.67 mm |
| Width | 9.65 mm |
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