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FQPF32N20C
- Part No
- FQPF32N20C
- Manufacturer
- onsemi
- Description
- Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220F
- Datasheet
- FQPF32N20C
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 28 A |
| Current Rating | 28 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 82 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 210 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.22 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 50 W |
| Rds On Max | 82 mΩ |
| Rise Time | 270 ns |
| Turn-Off Delay Time | 245 ns |
| Turn-On Delay Time | 25 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 2.27 g |
| Height | 19.5 mm |
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