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FQPF2N80YDTU
- Part No
- FQPF2N80YDTU
- Manufacturer
- onsemi
- Description
- Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- FQPF2N80YDTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.5 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 4.9 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 28 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 550 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 35 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rds On Max | 6.3 Ω |
| Rise Time | 30 ns |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 12 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Weight | 2.565 g |
| Height | 16.07 mm |
| Length | 10.36 mm |
| Width | 4.9 mm |
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