FQP10N60C Generic image

FQP10N60C

Part No
FQP10N60C
Manufacturer
onsemi
Description
Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail
Datasheet
FQP10N60C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.5 A
    Current Rating 9.5 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 730 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Dual Supply Voltage 600 V
    Element Configuration Single
    Fall Time 77 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.04 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 156 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Elements 1
    Power Dissipation 156 W
    Rds On Max 730 mΩ
    Resistance 730 mΩ
    Rise Time 69 ns
    Termination Through Hole
    Threshold Voltage 4 V
    Turn-Off Delay Time 144 ns
    Turn-On Delay Time 23 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 8.79 mm
    Length 10.36 mm
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