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FQB9N50CFTM
- Part No
- FQB9N50CFTM
- Manufacturer
- onsemi
- Description
- Mosfet N-ch 500V 9A D2PAK
- Datasheet
- FQB9N50CFTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 850 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 64 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.03 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 173 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 173 W |
| Rds On Max | 850 mΩ |
| Rise Time | 65 ns |
| Turn-Off Delay Time | 93 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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