FDD6632 Generic image

FDD6632

Part No
FDD6632
Manufacturer
onsemi
Description
30V N-Channel Logic Level UltraFET Trench Power MOSFET
Datasheet
FDD6632
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating 9 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 23 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 255 pF
    Max Operating Temperature 175 °C
    Max Power Dissipation 15 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 15 W
    Rds On Max 70 mΩ
    Rise Time 41 ns
    Turn-Off Delay Time 10 ns
    Voltage Rating (DC) 30 V
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Pins 2
    Number of Terminals 2
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