FQB30N06LTM Generic image

FQB30N06LTM

Part No
FQB30N06LTM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK
Datasheet
FQB30N06LTM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 32 A
    Current Rating 32 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 45 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 110 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.04 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 79 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.75 W
    Rds On Max 35 mΩ
    Resistance 35 mΩ
    Rise Time 210 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 15 ns
    Voltage Rating (DC) 60 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 4.83 mm
    Length 10.67 mm
    Width 9.65 mm
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