FMB5551 Generic image

FMB5551

Part No
FMB5551
Manufacturer
onsemi
Description
Bipolar Transistors - BJT NPN Transistor General Purpose
Datasheet
FMB5551
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 180 V
    Collector Emitter Breakdown Voltage 160 V
    Collector Emitter Saturation Voltage 150 mV
    Collector Emitter Voltage (VCEO) 160 V
    Current Rating 600 mA
    Element Configuration Dual
    Emitter Base Voltage (VEBO) 6 V
    Frequency 300 MHz
    Gain Bandwidth Product 100 MHz
    hFE Min 30
    Max Collector Current 600 mA
    Max Frequency 300 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 700 mW
    Min Operating Temperature -55 °C
    Number of Elements 2
    Polarity NPN
    Power Dissipation 700 mW
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Transition Frequency 100 MHz
    Voltage Rating (DC) 160 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 900 µm
    Length 3 mm
    Width 1.68 mm
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