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FJA4210OTU
- Part No
- FJA4210OTU
- Manufacturer
- onsemi
- Description
- Bipolar Transistors - BJT PNP Si Transistor Epitaxial
- Datasheet
- FJA4210OTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | -200 V |
| Collector Emitter Breakdown Voltage | 140 V |
| Collector Emitter Saturation Voltage | -500 mV |
| Collector Emitter Voltage (VCEO) | 140 V |
| Current Rating | -10 A |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -6 V |
| Frequency | 30 MHz |
| Gain Bandwidth Product | 30 MHz |
| hFE Min | 70 |
| Max Collector Current | 10 A |
| Max Frequency | 30 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 100 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 100 W |
| Transition Frequency | 30 MHz |
| Voltage Rating (DC) | -140 V |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.401 g |
| Height | 20.1 mm |
| Length | 15.8 mm |
| Width | 5 mm |
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