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FJV1845PMTF
- Part No
- FJV1845PMTF
- Manufacturer
- onsemi
- Description
- Bipolar Transistors - BJT NPN Epitaxial Transistor
- Datasheet
- FJV1845PMTF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 120 V |
| Collector Emitter Breakdown Voltage | 120 V |
| Collector Emitter Saturation Voltage | 70 mV |
| Collector Emitter Voltage (VCEO) | 120 V |
| Current Rating | 50 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| hFE Min | 200 |
| Max Breakdown Voltage | 120 V |
| Max Collector Current | 50 mA |
| Max Frequency | 110 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Transition Frequency | 110 MHz |
| Voltage Rating (DC) | 120 V |
| Case/Package | SOT-23 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 30 mg |
| Height | 1.04 mm |
| Length | 2.9 mm |
| Width | 1.3 mm |
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