FJT44TF Generic image

FJT44TF

Part No
FJT44TF
Manufacturer
onsemi
Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Datasheet
FJT44TF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 500 V
    Collector Emitter Breakdown Voltage 400 V
    Collector Emitter Saturation Voltage 750 mV
    Collector Emitter Voltage (VCEO) 400 V
    Current Rating 300 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 6 V
    hFE Min 40
    Max Breakdown Voltage 400 V
    Max Collector Current 300 mA
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 2 W
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Voltage Rating (DC) 400 V
    Case/Package SOT-223-4
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.5 mm
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