FDP8N50NZ Generic image

FDP8N50NZ

Part No
FDP8N50NZ
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220
Datasheet
FDP8N50NZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Drain to Source Resistance 850 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 27 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 735 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 139 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 130 W
    Rds On Max 850 mΩ
    Rise Time 34 ns
    Schedule B 8541290080
    Turn-Off Delay Time 43 ns
    Turn-On Delay Time 17 ns
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.67 mm
    Width 4.83 mm
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