FDP26N40 Generic image

FDP26N40

Part No
FDP26N40
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 400V, 26A, 160mΩ, TO-220
Datasheet
FDP26N40
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 26 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 160 mΩ
    Drain to Source Voltage (Vdss) 400 V
    Element Configuration Single
    Fall Time 66 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3.185 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 265 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 265 W
    Rds On Max 160 mΩ
    Resistance 160 MΩ
    Rise Time 100 ns
    Schedule B 8541290080
    Turn-Off Delay Time 115 ns
    Turn-On Delay Time 45 ns
    Case/Package TO-220
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.51 mm
    Length 10.1 mm
    Width 4.7 mm
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