FDMC3612 Generic image

FDMC3612

Part No
FDMC3612
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ
Datasheet
FDMC3612
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.3 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 110 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 880 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 35 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.3 W
    Rds On Max 110 mΩ
    Rise Time 2.8 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 7.4 ns
    Contact Plating Gold
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 180 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
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