FDMB3800N Generic image

FDMB3800N

Part No
FDMB3800N
Manufacturer
onsemi
Description
Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40mΩ
Datasheet
FDMB3800N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.8 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 40 Ω
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Dual
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 465 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 750 mW
    Rds On Max 40 mΩ
    Resistance 40 MΩ
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 21 ns
    Turn-On Delay Time 8 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 47 mg
    Height 800 µm
    Length 3 mm
    Width 1.9 mm
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