FDD8874 Generic image

FDD8874

Part No
FDD8874
Manufacturer
onsemi
Description
PowerTrench® MOSFET, N-Channel, 30V, 116A, 5.1mΩ
Datasheet
FDD8874
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 35 A
    Current Rating 116 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 6.4 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 37 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.99 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 110 W
    Rds On Max 5.1 mΩ
    Rise Time 96 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 47 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 30 V
    Case/Package TO-252-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    added to cart View cart