FDB2614 Generic image

FDB2614

Part No
FDB2614
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
Datasheet
FDB2614
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 62 A
    Current Rating 62 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 27 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Dual Supply Voltage 200 V
    Element Configuration Single
    Fall Time 162 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 7.23 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 260 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 260 W
    Rds On Max 27 mΩ
    Resistance 27 MΩ
    Rise Time 284 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 4 V
    Turn-Off Delay Time 103 ns
    Turn-On Delay Time 77 ns
    Voltage Rating (DC) 200 V
    Case/Package TO-263
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 2
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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