FDB2532 Generic image

FDB2532

Part No
FDB2532
Manufacturer
onsemi
Description
Trans MOSFET N-CH 150V 8A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 150V 79A D2PAK
Datasheet
FDB2532
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Current 79 A
    Current Rating 79 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 16 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Dual Supply Voltage 150 V
    Element Configuration Single
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.87 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 310 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 310 W
    Rds On Max 16 mΩ
    Resistance 16 MΩ
    Rise Time 30 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 4 V
    Turn-Off Delay Time 39 ns
    Turn-On Delay Time 16 ns
    Voltage 150 V
    Voltage Rating (DC) 150 V
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 4.535924 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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