BZX79C9V1 Generic image

BZX79C9V1

Part No
BZX79C9V1
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - BZX79-C9V1 - DIODE, ZENER, 9.1V, 500MW
Datasheet
BZX79C9V1
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Breakdown Voltage 9.1 V
    Capacitance 70 pF
    Element Configuration Single
    ESD Protection No
    Forward Voltage 1.5 V
    Impedance 15 Ω
    Max Junction Temperature (Tj) 200 °C
    Max Operating Temperature 200 °C
    Max Power Dissipation 500 mW
    Max Reverse Leakage Current 500 nA
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Bulk
    Peak Reverse Current 500 nA
    Polarity Unidirectional
    Power Dissipation 500 mW
    Power Rating 500 mW
    Reference Voltage 9.1 V
    Reverse Voltage 6 V
    Schedule B 8541100050, 8541100050|8541100050|8541100050|8541100050|8541100050
    Termination Axial
    Test Current 5 mA
    Tolerance 6 %
    Voltage Rating (DC) 9.1 V
    Voltage Tolerance 5 %
    Working Voltage 9.1 V
    Zener Current 5 mA
    Zener Voltage 9.1 V
    Body Material Glass
    Case/Package Axial
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 2
    Number of Terminals 2
    Weight 80 g
    Diameter 1.91 mm
    Height 1.91 mm
    Length 4.56 mm
    Width 6.35 mm
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