BCP55 Generic image

BCP55

Part No
BCP55
Manufacturer
onsemi
Description
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Datasheet
BCP55
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 60 V
    Collector Emitter Breakdown Voltage 60 V
    Collector Emitter Saturation Voltage 500 mV
    Collector Emitter Voltage (VCEO) 60 V
    Current Rating 1.5 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Gain Bandwidth Product 100 MHz
    hFE Min 25
    Max Breakdown Voltage 60 V
    Max Collector Current 1.5 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Cut Tape
    Polarity NPN
    Power Dissipation 1.5 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Voltage Rating (DC) 60 V
    Case/Package SOT-223-4
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 188 mg
    Height 1.75 mm
    Length 6.5 mm
    Width 3.5 mm
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