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BLF8G27LS100GVQ
- Part No
- BLF8G27LS100GVQ
- Manufacturer
- NXP
- Description
- RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BLF8G27LS100GVQ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 900 mA |
| Drain to Source Resistance | 100 mΩ |
| Drain to Source Voltage (Vdss) | 65 V |
| Frequency | 2.7 GHz |
| Gain | 17 dB |
| Gate to Source Voltage (Vgs) | 13 V |
| Max Operating Temperature | 225 °C |
| Number of Elements | 1 |
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