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BLF6G10LS200RN:11
- Part No
- BLF6G10LS200RN:11
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 49A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BLF6G10LS200RN:11
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 49 A |
| Current Rating | 49 A |
| Drain to Source Breakdown Voltage | 65 V |
| Drain to Source Voltage (Vdss) | 65 V |
| Element Configuration | Single |
| Frequency | 891.5 MHz |
| Gain | 20 dB |
| Gate to Source Voltage (Vgs) | 13 V |
| Max Frequency | 894 MHz |
| Max Operating Temperature | 225 °C |
| Max Output Power | 40 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Output Power | 40 W |
| Test Current | 1.4 A |
| Test Voltage | 28 V |
| Voltage Rating | 65 V |
| Mount | Surface Mount |
| Number of Pins | 3 |
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