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UPA2200T1M-T1-AT
- Part No
- UPA2200T1M-T1-AT
- Manufacturer
- Renesas
- Description
- N-Channel Mos Field Effect Transistor For Switching
- Datasheet
- UPA2200T1M-T1-AT
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Resistance | 23 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Fall Time | 5.3 ns |
| Part Family | UPA2200T1M |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 870 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 23 mΩ |
| Rise Time | 3.4 ns |
| Turn-Off Delay Time | 31.7 ns |
| Turn-On Delay Time | 9.2 ns |
| MSL | 1 |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 850 µm |
| Length | 2 mm |
| Width | 3 mm |
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