Generic image
TPS1100DR
- Part No
- TPS1100DR
- Manufacturer
- Texas Instruments
- Description
- MOSFET P-CH 15V 1.6A 8-SOIC
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.6 A |
| Drain to Source Breakdown Voltage | 15 V |
| Drain to Source Resistance | 400 mΩ |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 2 V |
| Max Operating Temperature | 125 °C |
| Max Power Dissipation | 791 mW |
| Min Operating Temperature | -40 °C |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 791 mW |
| Rds On Max | 180 mΩ |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 13 ns |
| Turn-On Delay Time | 4.5 ns |
| Case/Package | SOIC |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Thickness | 1.58 mm |
| Width | 3.91 mm |
added to cart
View cart
Related Products