STW69N65M5 Generic image

STW69N65M5

Part No
STW69N65M5
Manufacturer
STMicroelectronics
Description
N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in TO-247 package
Datasheet
STW69N65M5
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 58 A
    Drain to Source Breakdown Voltage 650 V
    Drain to Source Voltage (Vdss) 650 V
    Element Configuration Single
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 6.42 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 330 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 330 W
    Rds On Max 45 mΩ
    Resistance 45 MΩ
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage 4 V
    Turn-Off Delay Time 102 ns
    Turn-On Delay Time 102 ns
    Case/Package TO-247
    Mount Through Hole
    Number of Pins 3
    Height 20.15 mm
    Length 15.75 mm
    Width 5.15 mm
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