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STW24NM65N
- Part No
- STW24NM65N
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 650V 19A TO-247
- Datasheet
- STW24NM65N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 19 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 2.5 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 160 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 160 W |
| Rds On Max | 190 mΩ |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 80 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
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