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STW24N60DM2
- Part No
- STW24N60DM2
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package
- Datasheet
- STW24N60DM2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 18 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 200 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 15 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1.055 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 150 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Rds On Max | 200 mΩ |
| Rise Time | 8.7 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Turn-Off Delay Time | 60 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 38.000013 g |
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