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STU6N62K3
- Part No
- STU6N62K3
- Manufacturer
- STMicroelectronics
- Description
- N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK
- Datasheet
- STU6N62K3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.5 A |
| Drain to Source Breakdown Voltage | 620 V |
| Drain to Source Resistance | 1.2 Ω |
| Drain to Source Voltage (Vdss) | 620 V |
| Element Configuration | Single |
| Fall Time | 19 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 875 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 90 W |
| Min Breakdown Voltage | 620 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 90 W |
| Rds On Max | 1.2 Ω |
| Rise Time | 12.5 ns |
| Threshold Voltage | 3.75 V |
| Turn-Off Delay Time | 49 ns |
| Turn-On Delay Time | 22 ns |
| Case/Package | TO-251 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 6.9 mm |
| Length | 6.6 mm |
| Width | 2.4 mm |
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