STU150N3LLH6 Generic image

STU150N3LLH6

Part No
STU150N3LLH6
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 30V 80A IPAK
Datasheet
STU150N3LLH6
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 80 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 4.9 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 46 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.04 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 110 W
    Rds On Max 3.3 mΩ
    Rise Time 18 ns
    Threshold Voltage 1 V
    Turn-Off Delay Time 75 ns
    Turn-On Delay Time 17 ns
    Case/Package TO-251
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 6.9 mm
    Length 6.6 mm
    Width 2.4 mm
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