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STU10NM60N
- Part No
- STU10NM60N
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 600V 10A IPAK
- Datasheet
- STU10NM60N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Resistance | 550 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Fall Time | 15 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 540 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 70 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 70 W |
| Rds On Max | 550 mΩ |
| Rise Time | 12 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | TO-251-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 6.9 mm |
| Length | 6.6 mm |
| Width | 2.4 mm |
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