STS4NF100 Generic image

STS4NF100

Part No
STS4NF100
Manufacturer
STMicroelectronics
Description
MOSFET Transistor, N Channel, 4 A, 100 V, 60 mohm, 10 V
Datasheet
STS4NF100
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating 4 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 70 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 870 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 70 mΩ
    Rise Time 45 ns
    Schedule B 8541290080
    Turn-Off Delay Time 49 ns
    Turn-On Delay Time 58 ns
    Voltage Rating (DC) 100 V
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.25 mm
    Length 5 mm
    Width 4 mm
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