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STS1NK60Z
- Part No
- STS1NK60Z
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package
- Datasheet
- STS1NK60Z
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 250 mA |
| Current Rating | 250 mA |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 15 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Fall Time | 28 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 94 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2 W |
| Rds On Max | 15 Ω |
| Rise Time | 5 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 13 ns |
| Turn-On Delay Time | 5.5 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | SO |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
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