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STP7NM80
- Part No
- STP7NM80
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 800V 6.5A TO-220
- Datasheet
- STP7NM80
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.5 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 1.05 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 620 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 90 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 90 W |
| Rds On Max | 1.05 Ω |
| Resistance | 1.05 Ω |
| Rise Time | 8 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 35 ns |
| Turn-On Delay Time | 20 ns |
| Case/Package | TO-220 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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