STP5NK100Z Generic image

STP5NK100Z

Part No
STP5NK100Z
Manufacturer
STMicroelectronics
Description
N-channel 1000V - 3 Ohm - 3.5A - TO-220 Zener-protected Supermesh Mosfet
Datasheet
STP5NK100Z
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.5 A
    Current Rating 3.5 A
    Drain to Source Breakdown Voltage 1 kV
    Drain to Source Resistance 3.7 Ω
    Drain to Source Voltage (Vdss) 1 kV
    Element Configuration Single
    Fall Time 19 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.154 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 1 kV
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 125 W
    Rds On Max 3.7 Ω
    Resistance 3.7 Ω
    Rise Time 7.7 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.75 V
    Turn-Off Delay Time 51.5 ns
    Turn-On Delay Time 22.5 ns
    Voltage Rating (DC) 1 kV
    Case/Package TO-220
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 9.15 mm
    Length 10.4 mm
    Width 4.6 mm
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