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STP4N80K5
- Part No
- STP4N80K5
- Manufacturer
- STMicroelectronics
- Description
- N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220 package
- Datasheet
- STP4N80K5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 2.5 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 21 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 175 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 60 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 60 W |
| Rds On Max | 2.5 Ω |
| Resistance | 2.5 Ω |
| Rise Time | 15 ns |
| Turn-Off Delay Time | 36 ns |
| Turn-On Delay Time | 16.5 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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