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STP34NM60N
- Part No
- STP34NM60N
- Manufacturer
- STMicroelectronics
- Description
- N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package
- Datasheet
- STP34NM60N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 29 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 105 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 70 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 2.722 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 210 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 210 W |
| Rds On Max | 105 mΩ |
| Resistance | 105 MΩ |
| Rise Time | 34 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 106 ns |
| Turn-On Delay Time | 17 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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