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STP26NM60ND
- Part No
- STP26NM60ND
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 600V 21A TO220 / Low input capacitance and gate charge
- Datasheet
- STP26NM60ND
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 21 A |
| Drain to Source Resistance | 175 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 27.5 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1.817 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 190 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 190 W |
| Rds On Max | 175 mΩ |
| Rise Time | 14.5 ns |
| Turn-Off Delay Time | 69 ns |
| Turn-On Delay Time | 22 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 329.988449 mg |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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