STP20NM60FD Generic image

STP20NM60FD

Part No
STP20NM60FD
Manufacturer
STMicroelectronics
Description
Transistor MOSFET N-CH 600V 20A 3-Pin (3+Tab) TO-220 Tube
Datasheet
STP20NM60FD
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating 20 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 290 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 22 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.3 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 192 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -65 °C
    Number of Elements 1
    Power Dissipation 192 W
    Rds On Max 290 mΩ
    Rise Time 12 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-On Delay Time 25 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 9.15 mm
    Length 10.4 mm
    Width 4.6 mm
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