STP20NM50FP Generic image

STP20NM50FP

Part No
STP20NM50FP
Manufacturer
STMicroelectronics
Description
N CH POWER MOSFET, FDmesh, 500V, 20A, TO-220FP; Transistor Polarity: N Channel; C
Datasheet
STP20NM50FP
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating 20 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 250 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 8.5 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.48 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 35 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -65 °C
    Number of Elements 1
    Power Dissipation 45 W
    Rds On Max 250 mΩ
    Resistance 250 mΩ
    Rise Time 16 ns
    Threshold Voltage 4 V
    Turn-Off Delay Time 9 ns
    Turn-On Delay Time 24 ns
    Voltage Rating (DC) 550 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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