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STP19NM50N
- Part No
- STP19NM50N
- Manufacturer
- STMicroelectronics
- Description
- N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
- Datasheet
- STP19NM50N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 14 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 250 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 110 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 110 W |
| Rds On Max | 250 mΩ |
| Resistance | 250 mΩ |
| Rise Time | 16 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 61 ns |
| Turn-On Delay Time | 12 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
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