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STP165N10F4
- Part No
- STP165N10F4
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 100V 120A TO-220
- Datasheet
- STP165N10F4
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 120 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 5.1 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 106 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 10.5 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 315 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 315 W |
| Rds On Max | 5.5 mΩ |
| Resistance | 5.5 MΩ |
| Rise Time | 62 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 154 ns |
| Turn-On Delay Time | 29.6 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Terminals | 3 |
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