Generic image
STP10NM65N
- Part No
- STP10NM65N
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N-CH 650V 9A TO-220
- Datasheet
- STP10NM65N
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 480 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 850 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 90 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Elements | 1 |
| Power Dissipation | 90 W |
| Rds On Max | 480 mΩ |
| Resistance | 480 mΩ |
| Rise Time | 8 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 12 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 15.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
added to cart
View cart
Related Products