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STN2NE06
- Part No
- STN2NE06
- Manufacturer
- STMicroelectronics
- Description
- 2 A 60 V 0.25 Ohm N-channel Si Power Mosfet
- Datasheet
- STN2NE06
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 250 mΩ |
| Fall Time | 4.5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rise Time | 10 ns |
| Case/Package | SOT-223 |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Number of Terminals | 4 |
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