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STN1NF10

Part No: STN1NF10
Manufacturer: STMicroelectronics
Description: Mosfet Transistor, N Channel, 500 Ma, 100 V, 700 Mohm, 10 V, 3 V |Stmicroelectronics STN1NF10
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	1 A
Current Rating	1 A
Drain to Source Breakdown Voltage	100 V
Drain to Source Resistance	800 mΩ
Drain to Source Voltage (Vdss)	100 V
Element Configuration	Single
Fall Time	6.5 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	105 pF
Max Operating Temperature	150 °C
Max Power Dissipation	2.5 W
Min Breakdown Voltage	100 V
Min Operating Temperature	-55 °C
Number of Elements	1
Packaging	Cut Tape
Power Dissipation	2.5 W
Rds On Max	800 mΩ
Rise Time	5.5 ns
Threshold Voltage	3 V
Turn-Off Delay Time	13 ns
Turn-On Delay Time	4 ns
Voltage Rating (DC)	100 V
Case/Package	SOT-223
Mount	Surface Mount
Number of Pins	3
Number of Terminals	4
Height	1.6 mm
Length	6.7 mm
Width	3.7 mm