STN1HNK60 Generic image

STN1HNK60

Part No
STN1HNK60
Manufacturer
STMicroelectronics
Description
N-channel 600V 8 Ohm 0.4A SOT-223 Supermesh Mosfet
Datasheet
STN1HNK60
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 400 mA
    Current Rating 400 mA
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 8.5 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 156 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.3 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 3.3 W
    Rds On Max 8.5 Ω
    Resistance 8.5 Ω
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 19 ns
    Turn-On Delay Time 6.5 ns
    Voltage Rating (DC) 600 V
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Height 1.82 mm
    Length 6.5 mm
    Width 3.5 mm
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