STL8P2UH7 Generic image

STL8P2UH7

Part No
STL8P2UH7
Manufacturer
STMicroelectronics
Description
P-channel 20 V, 0.0195 Ohm typ., 8 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 2x2 package
Datasheet
STL8P2UH7
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 22.5 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 84.5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 2.39 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.4 W
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 2.4 W
    Rds On Max 22.5 mΩ
    Rise Time 30.5 ns
    Turn-Off Delay Time 128 ns
    Turn-On Delay Time 12.5 ns
    Mount Surface Mount
    Number of Pins 6
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