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STI20N65M5
- Part No
- STI20N65M5
- Manufacturer
- STMicroelectronics
- Description
- N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAK package
- Datasheet
- STI20N65M5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 18 A |
| Drain to Source Breakdown Voltage | 650 V |
| Drain to Source Resistance | 190 mΩ |
| Drain to Source Voltage (Vdss) | 650 V |
| Element Configuration | Single |
| Fall Time | 7.5 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 1.434 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 130 W |
| Min Breakdown Voltage | 650 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 130 W |
| Rds On Max | 190 mΩ |
| Rise Time | 7.5 ns |
| Schedule B | 8541290080 |
| Case/Package | TO-262-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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