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STGB10M65DF2
- Part No
- STGB10M65DF2
- Manufacturer
- STMicroelectronics
- Description
- Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(2+Tab) D2PAK T/R
- Datasheet
- STGB10M65DF2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Breakdown Voltage (VCES) | 650 V |
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Element Configuration | Single |
| Forward Current | 10 A |
| Forward Voltage | 1.5 V |
| Max Breakdown Voltage | 650 V |
| Max Collector Current | 20 A |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 115 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Reverse Recovery Time | 96 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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