STF28NM50N Generic image

STF28NM50N

Part No
STF28NM50N
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 500V 21A TO-220FP
Datasheet
STF28NM50N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 21 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 158 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 52 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.735 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 35 W
    Rds On Max 158 mΩ
    Resistance 158 MΩ
    Rise Time 19 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 62 ns
    Turn-On Delay Time 13.6 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 16.4 mm
    Length 10.4 mm
    Width 4.6 mm
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